| PART |
Description |
Maker |
| AP0403GH |
75 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
ADVANCED POWER ELECTRONICS CORP
|
| HUF76145S3S HUF76145P3 |
75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| HUF76145S3S HUF76145P3 FN4401 |
From old datasheet system
75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| NP80N04PDG NP80N04PDG-E1B-AY NP80N04PDG-E2B-AY NP8 |
MOS FIELD EFFECT TRANSISTOR
80 A, 40 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
|
Renesas Electronics Corporation
Yuasa Battery, Inc.
|
| IPD90P03P4-04 |
OptiMOS-P2 Power-Transistor
90 A, 30 V, 0.0045 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 GREEN, PLASTIC PACKAGE-3
|
Infineon Technologies AG
|
| LOB1-R0523FI LOB1-R0221FI LOB1-R022JI LOB1-R00562F |
RESISTOR, 1 W, 1 %, 0.0523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0221 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.022 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00562 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00604 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0062 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0147 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00523 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0232 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0332 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00576 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00649 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0051 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00698 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.0068 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00511 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0422 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.047 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.033 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0237 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0133 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0226 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00665 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0357 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00549 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 5 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00634 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.005 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00619 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.0475 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, 1 W, 1 %, 0.00681 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| 878-2-3 SD878-2-3 |
CAP & CHAN, SMA
|
Winchester Electronics Corporation
|
|
